View MRF6S9125NR1_5040442.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial an d industrial applications with frequencies up to 1000 mhz. the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. n - cdma application ? typical single - carrier n - cdma performance: v dd = 28 volts, i dq = 950 ma, p out = 27 watt avg., full frequency band (865 - 895 mhz), is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 20.2 db drain efficiency ? 31% acpr @ 750 khz offset = - 47.1 dbc @ 30 khz bandwidth gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 700 ma, p out = 60 watts avg., full frequency band (865 - 895 mhz or 921 - 960 mhz) power gain ? 20 db drain efficiency ? 40% (typ) spectral regrowth @ 400 khz offset = - 63 dbc spectral regrowth @ 600 khz offset = - 78 dbc evm ? 1.5% rms gsm application ? typical gsm performance: v dd = 28 volts, i dq = 700 ma, p out = 125 watts, full frequency band (921 - 960 mhz) power gain ? 19 db drain efficiency ? 62% ? capable of handling 10:1 vswr, @ 28 vdc, @ p1db output power, @ f = 880 mhz ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? n suffix indicates lead - free terminations ? 200 c capable plastic package ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc total device dissipation @ t c = 25 c derate above 25 c p d 398 2.3 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: mrf6s9125 rev. 1, 7/2005 freescale semiconductor technical data MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 880 mhz, 27 w avg., 28 v single n - cdma lateral n - channel rf power mosfets case 1486 - 03, style 1 to - 270 wb - 4 plastic MRF6S9125NR1(mr1) case 1484 - 02, style 1 to - 272 wb - 4 plastic mrf6s9125nbr1(mbr1) ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 125 w cw case temperature 76 c, 27 w cw r jc 0.44 0.45 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) c (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 400 adc) v gs(th) 1 2.1 3 vdc gate quiescent voltage (v ds = 28 vdc, i d = 950 madc) v gs(q) 2 2.89 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 2.74 adc) v ds(on) 0.05 0.23 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 8 adc) g fs ? 6 ? s dynamic characteristics (3) output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 60 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 950 ma, p out = 27 w, f = 880 mhz power gain g ps 19 20.2 24 db drain efficiency d 29 31 ? % adjacent channel power ratio acpr ? - 47.1 -45 dbc input return loss irl ? -16 -9 db 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. 3. part is internally input matched. (continued)
MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical gsm edge performances (in freescale gsm edge test fixture, 50 hm system) v dd = 28 vdc, i dq = 950 ma, p out = 60 w avg., 921 mhz 4 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 figure 1. MRF6S9125NR1(nbr1)/mr1(mbr1) test circuit schematic z10 0.057 x 0.620 microstrip z11 0.119 x 0.620 microstrip z12 0.450 x 0.220 microstrip z13 0.061 x 0.220 microstrip z14 0.078 x 0.220 microstrip z15 0.692 x 0.080 microstrip z16 0.368 x 0.080 microstrip pcb arlon gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1, z17 0.200 x 0.080 microstrip z2 1.060 x 0.080 microstrip z3 0.382 x 0.220 microstrip z4 0.108 x 0.220 microstrip z5 0.200 x 0.420 x 0.620 taper z6 0.028 x 0.620 microstrip z7 0.236 x 0.620 microstrip z8 0.050 x 0.620 microstrip z9 0.238 x 0.620 microstrip r2 v bias v supply rf output rf input dut c3 l1 z1 c2 z2 z3 c1 z4 z5 z6 z7 c4 z8 z9 r1 l2 c10 c6 c11 c18 c20 c21 c22 c9 z10 z11 z12 z14 z15 + + + + c8 + c7 + c5 c12 c13 z13 c14 c15 c16 z16 c17 z17 c23 c19 table 6. MRF6S9125NR1(nbr1)/mr1(mbr1) test circuit component designations and values part description part number manufacturer c1 20 pf chip capacitor 600b200ft250xt atc c2 6.2 pf chip capacitor 600b6r2bt250xt atc c3, c15 0.8 - 8.0 pf variable capacitors, gigatrim 27291sl johanson c4, c5 11 pf chip capacitors 600b110ft250xt atc c6, c18, c19 0.56 f, 50 v chip capacitors c1825c564j5rac kemet c7, c8 47 f, 16 v tantalum capacitors 593d476x9016d2t vishay c9, c23 47 pf chip capacitors 700b470fw500xt atc c10 100 f, 50 v electrolytic capacitor 515d107m050bb6a vishay c11, c12 12 pf chip capacitors 600b120ft250xt atc c13, c14 5.1 pf chip capacitors 600b5r1bt250xt atc c16 0.3 pf chip capacitor 700b0r3bw500xt atc c17 39 pf chip capacitor 700b390fw500xt atc c20, c21 22 f, 35 v tantalum capacitors t491x226k035as kemet c22 470 f, 63 v electrolytic capacitor sme63v471m12x25ll united chemi - con l1 7.15 nh inductor 1606 - 7j coilcraft l2 8.0 nh inductor a03t coilcraft r1 15 ? , 1/4 w chip resistor (1210) dale/vishay r2 560 k ?, 1 /8 w resistor (1206) dale/vishay
MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 5 rf device data freescale semiconductor figure 2. MRF6S9125NR1(nbr1)/mr1(mbr1) test circuit component layout cut out area c9 r2 c10 v gg v dd c8 c7 c1 c2 c3 c5 l1 c4 c6 c12 c13 c15 c16 c17 c14 l2 c11 c23 c18 c19 c20 c21 c22 900 mhz to272 wb rev. 0 r1
6 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 typical characteristics g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) ?25 ?20 910 850 irl g ps acpr f, frequency (mhz) figure 3. single - carrier n - cdma broadband performance @ p out = 27 watts avg. 890 880 870 860 18.5 20.5 20.3 ?70 34 32 30 ?40 ?50 ?60 d , drain efficiency (%) 20 19.8 19.5 19.3 19 ?30 900 alt1 ?15 ?10 ?5 v dd = 28 vdc, p out = 27 w (avg.) i dq = 950 ma, n?cdma is?95 pilot sync, paging, traffic codes 8 through 13 g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) ?25 ?20 910 850 irl g ps acpr f, frequency (mhz) figure 4. single - carrier n - cdma broadband performance @ p out = 62.5 watts avg. 900 890 880 870 860 18 19.6 19.4 ?70 52 48 44 ?40 ?50 ?60 d , drain efficiency (%) 19.2 19 18.8 18.6 18.4 ?30 ?15 ?10 ?5 v dd = 28 vdc, p out = 62.5 w (avg.) i dq = 950 ma, n?cdma is?95 pilot sync, paging, traffic codes 8 through 13 figure 5. two - tone power gain versus output power 100 16 22 i dq = 1475 ma p out , output power (watts) pep 20 18 10 g ps , power gain (db) 21 19 1187 ma 950 ma 1 300 v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements, 100 mhz tone spacing figure 6. third order intermodulation distortion versus output power ?30 ?10 1 p out , output power (watts) pep 10 ?20 100 ?60 ?40 intermodulation distortion (dbc) imd, third order ?50 18.2 40 17 712 ma 475 ma 18.8 28 d d alt1 300 i dq = 1425 ma 1187 ma 950 ma 712 ma 475 ma v dd = 28 vdc f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements, 100 mhz tone spacing
MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power 10 ?70 ?10 7th order p out , output power (watts) pep 5th order 3rd order ?20 ?30 ?40 1 300 imd, intermodulation distortion (dbc) ?50 ?60 100 figure 8. intermodulation distortion products versus tone spacing 10 ?60 ?10 0.1 7th order two ?tone spacing (mhz) v dd = 28 vdc, p out = 125 w (pep) i dq = 950 ma, two ?tone measurements center frequency = 880 mhz 5th order ?20 ?30 ?40 ?50 1 100 imd, intermodulation distortion (dbc) figure 9. pulse cw output power versus input power 36 56 29 p3db = 52.4 dbm (172.5 w) p in , input power (dbm) v dd = 28 vdc, i dq = 950 ma pulsed cw, 8 sec(on), 1 msec(off) center frequency = 880 mhz 54 52 50 48 30 32 31 34 33 35 actual ideal 55 53 49 51 28 p out , output power (dbm) figure 10. single - carrier n - cdma acpr, alt1, power gain and drain efficiency versus output power 0?80 p out , output power (watts) avg. 50 ?30 40 ?40 30 ?50 20 ?60 10 0.1 10 ?70 alt1 d g ps t c = ?30 c 85 c acpr d , drain efficiency (%), g ps , power gain (db) v dd = 28 vdc, i dq = 950 ma f = 880 mhz, n?cdma is?95 (pilot sync, paging, traffic codes 8 through 13) alt1, channel power (dbc) acpr, adjacent channel power ratio (dbc) 3rd order ?30 c p1db = 51.5 dbm (139.3 w) 1 100 200 25 c 85 c 25 c ?30 c 25 c 25 c 85 c v dd = 28 vdc, i dq = 950 ma f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements, center frequency = 880 mhz
8 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 typical characteristics 100 22 1 0 70 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 950 ma f = 880 mhz t c = ?30 c ?30 c 85 c 10 21 20 18 16 60 50 40 30 20 d , drain efficiency (%) g ps d g ps , power gain (db) figure 12. power gain versus output power p out , output power (watts) cw v dd = 12 v 16 v g ps , power gain (db) 250 16 21 0 17 19 18 20 i dq = 950 ma f = 880 mhz 19 17 15 10 25 c 50 100 200 20 v 24 v 28 v 32 v 200 85 c 25 c 150 210 10 9 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 7 mttf factor (hours x amps 2 ) 90 110 130 150 170 190 figure 13. mttf factor versus junction temperature 100 120 140 160 180 200
MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 9 rf device data freescale semiconductor n - cdma test signal 10 0.0001 100 0 peak ?to?average (db) figure 14. single - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 750 khz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 +acpr @ 30 khz integrated bw 1.2288 mhz channel bw 2.9 0.7 2.2 1.5 0 ?0.7 ?1.5 ?2.2 ?2.9 ?3.6 3.6 f, frequency (mhz) figure 15. single - carrier n - cdma spectrum ?acpr @ 30 khz integrated bw
10 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 f = 860 mhz figure 16. series equivalent source and load impedance f mhz z source ? z load ? 860 865 870 1.48 - j0.14 1.66 - j0.02 1.56 - j0.09 0.62 - j2.13 0.64 - j2.31 0.62 - j2.45 v dd = 28 vdc, i dq = 950 ma, p out = 27 w avg. 875 880 1.74 + j0.11 1.73 + j0.04 0.59 - j2.43 0.57 - j2.42 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network 885 890 895 1.68 + j0.19 1.52 + j0.33 1.61 + j0.25 0.54 - j2.36 0.57 - j2.18 0.58 - j1.94 900 1.48 + j0.37 0.59 - j1.86 z o = 5 ? f = 900 mhz z source f = 900 mhz f = 860 mhz z load
MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 11 rf device data freescale semiconductor notes
12 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 notes
MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 13 rf device data freescale semiconductor notes
14 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 package dimensions case 1486 - 03 issue c datum plane bottom view a1 2x d1 e3 e1 d3 e4 a2 pin 5 note 8 a b c h drain lead d a m aaa c 4x b1 2x d2 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at the top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension ? b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the ? b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone ? j" only. 8. hatching represents the exposed area of the heat slug. c1 f zone j e2 2x a dim a min max min max millimeters .100 .104 2.54 2.64 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .712 .720 18.08 18.29 d1 .688 .692 17.48 17.58 d2 .011 .019 0.28 0.48 d3 .600 ? ? ? 15.24 ? ? ? e .551 .559 14 14.2 e1 .353 .357 8.97 9.07 e2 .132 .140 3.35 3.56 e3 .124 .132 3.15 3.35 e4 .270 ? ? ? 6.86 ? ? ? f b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .025 bsc .106 bsc 0.64 bsc 2.69 bsc 1 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source aaa .004 0.10 gate lead 4x e 2x e seating plane 4 2 3 ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? e5 .346 .350 8.79 8.89 to - 270 wb - 4 plastic MRF6S9125NR1(mr1)
MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 15 rf device data freescale semiconductor case 1484 - 02 issue b notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions "d" and "e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions "d" and "e1" do include mold mismatch and are determined at datum plane ?h?. 5. dimension "b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the "b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone "j" only. 8. hatching represents the exposed area of the heat slug. datum plane y y dim a min max min max millimeters .100 .104 2.54 2.64 inches d2 .600 ? ? ? 15.24 ? ? ? e2 .270 ? ? ? 6.86 ? ? ? d .928 .932 23.57 23.67 d1 e .551 .559 14 14.2 e1 .353 .357 8.97 9.07 b1 .164 .170 4.17 4.32 c1 .007 .011 .18 .28 e r1 .063 .068 1.60 1.73 aaa .106 bsc .004 2.69 bsc .10 b a e1 d 4x b1 d1 e gate lead m aaa ca m aaa ca d2 e2 view y - y 4x e a1 .039 .043 0.99 1.09 f a2 .040 .042 1.02 1.07 .025 bsc 0.64 bsc a1 c h c1 a zone j seating plane .810 bsc 20.57 bsc pin 5 2x r1 b drain lead f a2 7 note 8 1 2 3 4 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source e3 e3 e3 .346 .350 8.79 8.89 to - 272 wb - 4 plastic mrf6s9125nbr1(mbr1)
16 rf device data freescale semiconductor MRF6S9125NR1 mrf6s9125nbr1 mrf6s9125mr1 mrf6s9125mbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s9125 rev. 1, 7/2005

▲Up To Search▲

Price & Availability of MRF6S9125NR1

	To Download MRF6S9125NR1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .